期刊论文

Cao, Liemao(liemao_cao@hynu.edu.cn);Ang, Yee Sin(yeesin_ang@sutd.edu.sg)

英文

Applied Physics Letters

0003-6951

2022

121

11

113104

10.1063/5.0117670

L.C. was supported by the National Natural Science Foundation of China (Grant No. 12104136) and by the Scientific Research Fund of Hunan Provincial Education Department (Grant No. 21B0622). G.Z. acknowledges the support from the National Natural Science Foundation of China (Grant No. 12174100). Y.S.A. acknowledges the support from the SUTD Startup Research Grant (Project No. SRT3CI21163).

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Forming a low-resistance semiconductor-metal contact is a critical step to achieve a high-performance two-dimensional (2D) semiconductor nanoelectronic device. Motivated by the recent discovery of monolayer γ-GeSe with exceptional high electrical conductivity reaching 105 S/m, we computationally investigate the interface contact properties of γ-GeSe with four representative classes of metallic systems, including 2D semimetal (graphene), 2D metal (NbS2), 3D semimetal (Bi), and 3D metal (Au) using first-principle density functional theory simul...