期刊论文

Goh, Kuan Eng Johnson

英文

ACS Nano

1936-0851

2020

14

10

13700-13708

10.1021/acsnano.0c05915

This research was supported by the Agency for Science, Technology and Research (A*STAR) under its A*STAR QTE Grant No. A1685b0005 and CDA Grant No. A1820g0086. Y.S.A., L.C., and L.K.A. acknowledge the supports of Singapore MOE Tier 2 Grant (2018-T2-1-007) and USA ONRG grant (N62909-19-1-2047). All the calculations were carried out using the computational resources provided by the National Supercomputing Centre (NSCC) Singapore. The authors thank C.H.K. Goh for assistance with indium evaporation in device fabrication.

本校为其他机构

Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapor deposition grown single-layer and bilayer WS2 devices with indium alloy contacts. The devices exhibit l...