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Intrinsic anion vacancy of Mo6X6 (X = S, Se, Te) nanowires as a promising nitrogen fixation catalysis: A first-principles study

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成果类型:
期刊论文
作者:
Cao, Jingyi;Yin, Wenjin;Zhang, Qi;Yao, Yongsheng;Cao, Juexian;...
通讯作者:
Wei, Xiaolin(xlw@xtu.edu.cn)
作者机构:
[Cao, Jingyi; Zhang, Qi; Yao, Yongsheng; Cao, Juexian; Wei, Xiaolin] Department of Physics and Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Hunan, Xiangtan
411105, China
College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang
421002, China
[Yin, Wenjin] School of Physics and Electronic Science, Hunan University of Science and Technology, Xiangtan
通讯机构:
[Xiaolin Wei] D
Department of Physics and Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Xiangtan University, Xiangtan 411105, Hunan, China<&wdkj&>College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang 421002, China
语种:
英文
期刊:
Chemical Physics Letters
ISSN:
0009-2614
年:
2022
卷:
802
页码:
139752
基金类别:
This work is supported by National Natural Science Foundation of China (No. 11774298, 52073243), Foundation of Hunan Educational committee (No.16A203, and 2019JJ50148), The science and technology innovation Program of Hunan Province (2020RC1009), The Science and Technology Plan Project of Hengyang City, (No. 202150083393), The Hunan Provincial Natural Science Foundation of China (No. 2020JJ4147), The Research Foundation of Education Bureau of Hunan Province, China (Grant No.19B076). The work was carried out at National Supercomputer Center in Tianjin, and the calculations were performed on Tianhe new generation Supercomputer.
机构署名:
本校为通讯机构
院系归属:
物理与电子工程学院
摘要:
Here, the performance of X vacancy of Mo6X6 (X = S, Se, Te) nanowires on nitrogen reduction reaction is investigated by DFT. Interestingly, the microstrain induced by X vacancy can adjust the electronic properties of nanowires, which enhances the adsorption and activation of N2 molecules. Particularly, Gibbs energy change proves that X vacancy can significantly reduce the limiting potential to −0.26 V for Sv-Mo6S6, −0.42 V for Sev-Mo6Se6, and −0.44 V for Tev-Mo6Te6. This lower limiting potential mainly depends on the position of d-band cente...

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