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Janus PtSSe and graphene heterostructure with tunable Schottky barrier

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成果类型:
期刊论文
作者:
Cao, Liemao;Ang, Yee Sin*;Wu, Qingyun;Ang, L. K.
通讯作者:
Ang, Yee Sin
作者机构:
[Cao, Liemao; Wu, Qingyun; Ang, Yee Sin; Ang, L. K.] SUTD, SUTD MIT Int Design Ctr, Sci & Math Cluster, 8 Somapah Rd, Singapore 487372, Singapore.
[Cao, Liemao] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.
通讯机构:
[Ang, Yee Sin] S
SUTD, SUTD MIT Int Design Ctr, Sci & Math Cluster, 8 Somapah Rd, Singapore 487372, Singapore.
语种:
英文
期刊:
Applied Physics Letters
ISSN:
0003-6951
年:
2019
卷:
115
期:
24
页码:
241601
基金类别:
This project was funded by Singapore MOE Tier 2 Grant (No. 2018-T2-1-007) and A*STAR IRG Grant (No. IRG A1783c0011). All the calculations were carried out using the computational resources provided by the National Supercomputing Centre (NSCC) Singapore.
机构署名:
本校为其他机构
院系归属:
物理与电子工程学院
摘要:
Janus transition metal dichalcogenides with a built-in structural cross-plane asymmetry have recently emerged as a new class of two-dimensional materials with a large cross-plane dipole. By using the density functional theory calculation, we report the formation of different Schottky barriers for Janus PtSSe and graphene based van der Waals heterostructures, where the Schottky barrier height (SBH) and type of contact can be controlled by adjusting the interlayer distance, by applying an external electric field, and by having multiple layers of ...

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