EFFICIENT OHMIC CONTACTS AND BUILT-IN ATOMIC SUBLAYER PROTECTION IN MOSI2N4 AND WSI2N4 MONOLAYERS - 成果

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EFFICIENT OHMIC CONTACTS AND BUILT-IN ATOMIC SUBLAYER PROTECTION IN MOSI₂N₄ AND WSI₂N₄ MONOLAYERS

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成果类型：

期刊论文

作者：

Wang, Qianqian;Cao, Liemao;Liang, Shi-Jun;Wu, Weikang;Wang, Guangzhao;...

通讯作者：

Yang, S.A.;Ang, Y.S.;Ang, L.K.;Cao, L.

作者机构：

[Wang, Qianqian; Yang, Shengyuan A.; Wang, Guangzhao; Ang, Yee Sin; Ang, Lay Kee] Singapore Univ Technol & Design, Sci Math & Technol, Singapore, Singapore.

[Wang, Qianqian; Yang, Shengyuan A.; Wang, Guangzhao; Wu, Weikang] Singapore Univ Technol & Design, Res Lab Quantum Mat, Singapore, Singapore.

[Cao, Liemao] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang, Peoples R China.

[Liang, Shi-Jun] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Phys, Natl Lab Solid State Microstruct, Nanjing, Peoples R China.

[Wu, Weikang] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore, Singapore.

通讯机构：

[Cao, Liemao] C

[Ang, Lay Kee; Yang, Shengyuan A.; Ang, Yee Sin] S

College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, China<&wdkj&>Science, Mathematics and Technology, Singapore University of Technology and Design, Singapore, Singapore<&wdkj&>Research Laboratory of Quantum Materials, Singapore University of Technology and Design, Singapore, Singapore<&wdkj&>Science, Mathematics and Technology, Singapore University of Technology and Design, Singapore, Singapore

语种：

英文

期刊：

npj 2D Materials and Applications

ISSN：

2397-7132

年：

2021

卷：

期：

DOI：

10.1038/s41699-021-00251-y

基金类别：

This work is supported by SUTD Start-Up Grant (SRG SCI 2021 163), Singapore Ministry of Education (MOE) Tier 2 Grant (No. 2018-T2-1-007), and SUTD-ZJU IDEA Visiting Professor Grant (SUTD-ZJU (VP) 202001). Q.W. is supported by SUTD Ph.D. Fellowship. S.A.Y. acknowledges the support of Singapore MOE AcRF Tier 2 (Grant No. MOE2017-T2-2-108). C.H.L. is supported by the Singapore Ministry of Education Academic Research Fund Tier I (WBS No. R-144-000-435-133). All the calculations were carried out using the computational resources provided by the National Supercomputing Centre (NSCC) Singapore.

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本校为其他机构

院系归属：

物理与电子工程学院

摘要：

AbstractMetal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices. Here, we show that MoSi2N4 and WSi2N4 monolayers—an emerging 2D semiconductor family with exceptional physical properties—exhibit strongly suppressed FLP and wide-range tunable SBH. An exceptionally large SBH slope parameter of S ≈ 0.7 is obtained which outperforms the vast majority of other 2...

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