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Strong bulk-surface interaction dominated in-plane anisotropy of electronic structure in GaTe

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成果类型:
期刊论文
作者:
Lai, Kang;Ju, Sailong;Zhu, Hongen;Wang, Hanwen;Wu, Hongjian;...
通讯作者:
Dai, Jiayu(jydai@nudt.edu.cn);Han, Zheng(vitto.han@gmail.com);Zhu, Mengjian(zhumengjian11@nudt.edu.cn)
作者机构:
[Ju, Sailong; Dai, Jiayu; Zhang, Enrui; Wu, Hongjian; Lai, Kang; Yang, Ming] Natl Univ Def Technol, Dept Phys, Changsha 410073, Peoples R China.
[Zhu, Hongen; Cui, Shengtao] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Peoples R China.
[Wang, Hanwen] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China.
[Yang, Bingjie; Li, Fangsen] Univ Sci & Technol China, Sch Nanotech & Nanobion, Hefei 230026, Peoples R China.
[Deng, Xiaohui] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.
通讯机构:
[Han, Zheng] S
[Zhu, Mengjian] C
[Dai, Jiayu] D
Department of Physics, National University of Defense Technology, Changsha, China<&wdkj&>State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan, China<&wdkj&>Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, China<&wdkj&>College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China
语种:
英文
期刊:
COMMUNICATIONS PHYSICS
ISSN:
2399-3650
年:
2022
卷:
5
期:
1
基金类别:
We thank Z. Sun for the support on ARPES measurements. This work was supported by the Science Challenge Project under Grant No. TZ2016001, the National Natural Science Foundation of China (NSFC) under Grant Nos. 11774429, 11804386, 12004429, 11974357 and U1932151, the NSAF under Grant No. U1830206 and the National Key R&D Program of China under Grant No. 2017YFA0403200, 2018YFA0306900 and 2019YFA0307800.
机构署名:
本校为其他机构
院系归属:
物理与电子工程学院
摘要:
Recently, intriguing physical properties have been unraveled in anisotropic layered semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry and thus a thickness-independent character emerges. Here, we apply high-resolution angle-resolved photoemission spectroscopy to directly image the in-plane anisotropic energy bands in monoclinic gallium telluride (GaTe). Our first-principles calculations reveal the in-plane anisotropic energy band structure of GaTe measured experimen...

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