Owing to the inverse size effect and CMOS process compatibility of ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) films, they have emerged as one of the most promising candidates for next-generation non-volatile memory devices. However, the presence of excessive oxygen vacancies (V O ) within the film or at the film–electrode interface results in degraded ferroelectricity, elevated coercive fields, and poor fatigue endurance, thereby impeding the progress toward practical device applications. Currently, employing oxide materials as oxygen donors to sup...
