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The mechanism and process of spontaneous boron doping in graphene in the theoretical perspective

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成果类型:
期刊论文
作者:
Deng, Xiaohui*;Zeng, Jing;Si, Mingsu;Lu, Wei
通讯作者:
Deng, Xiaohui
作者机构:
[Zeng, Jing; Deng, Xiaohui] Hengyang Normal Univ, Dept Phys & Elect Informat Sci, Hengyang 421008, Peoples R China.
[Si, Mingsu] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
[Lu, Wei] Hong Kong Polytech Univ, Univ Res Facil Mat Characterizat & Device Fabrica, Hong Kong, Hong Kong, Peoples R China.
通讯机构:
[Deng, Xiaohui] H
Hengyang Normal Univ, Dept Phys & Elect Informat Sci, Hengyang 421008, Peoples R China.
语种:
英文
期刊:
Physics Letters A
ISSN:
0375-9601
年:
2016
卷:
380
期:
41
页码:
3384-3388
基金类别:
Nation Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11304087, 61401151]; Science and Technology Project of Hengyang City [2013KJ33]; Science Research Fund of Hunan Provincial Education Department of China [12A020]; Construct Program of the Key Discipline in Hunan Province of China; research study and innovative experiment of university students in Hengyang Normal University [cx1422]
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子工程学院
摘要:
A theoretical model is presented that reveals the mechanism of spontaneous boron doping of graphene and is consistent with the microwave plasma experiment choosing trimethylboron as the doping source (Tang et al. (2012) [19]). The spontaneous boron doping originates from the synergistic effect of B and other groups (C, H, CH, CH2 or CH3) decomposing from trimethylboron. This work successfully explains the above experimental phenomenon and proposes a novel and feasible method aiming at B doping of graphene. The mechanism presented here may be also suitable for other two-dimensional carbon-based...

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