Electron density modulation of GaN nanowires by manganese incorporation for highly high-rate Lithium-ion storage

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成果类型：

期刊论文

作者：

Peng, Qiong*;Lei, Yong;Tang, Zhenkun;Sun, Changlong*;Li, Jin;...

通讯作者：

Peng, Qiong;Sun, Changlong

作者机构：

[Tang, Zhenkun; Peng, Qiong; Lei, Yong] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.

[Sun, Changlong] Qingdao Univ Sci & Technol, Coll Sino German Sci & Technol, Key Lab Polymer Mat Adv Manufacturings Technol Sh, Qingdao 266061, Shandong, Peoples R China.

[Li, Jin; Wu, Guang] Xiangtan Univ, Sch Phys & Optoelect, Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Peoples R China.

[Wang, Tailin] Qilu Univ Technol, Sch Mat Sci & Engn, Key Lab Proc & Testing Technol Glass & Funct Cera, Shandong Acad Sci, 3501 Univ Rd, Jinan 250353, Peoples R China.

[Yin, Zhengmao] Qingdao Univ Sci & Technol, Coll Mat Sci & Engn, Qingdao 266042, Shandong, Peoples R China.

通讯机构：

[Peng, Qiong] H

[Sun, Changlong] Q

Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.

Qingdao Univ Sci & Technol, Coll Sino German Sci & Technol, Key Lab Polymer Mat Adv Manufacturings Technol Sh, Qingdao 266061, Shandong, Peoples R China.

语种：

英文

关键词：

GaN;Nanowires;Doped;Lithium-ion batteries;DFT

期刊：

Electrochimica Acta

ISSN：

0013-4686

年：

2020

卷：

350

页码：

136380

DOI：

10.1016/j.electacta.2020.136380

基金类别：

Science Foundation of Hengyang Normal University of China [18D25]; Science and Technology Innovation Project Foundation of Hunan Province [2018RS3103]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China [51602168]; Guangdong Basic and Applied Basic Research Foundation [2019A1515110933]; Shandong Provincial Universities Young Innovative Talent Incubation Program-Inorganic Non-metallic Materials Research and Innovation Team

机构署名：

本校为第一且通讯机构

院系归属：

物理与电子工程学院

摘要：

Gallium nitride (GaN) has high theoretical capacity and low discharge platform. However, it still suffers from poor conductivity and unsatisfactory cycle performance in lithium-ion batteries (LIBs). In this work, the doped manganese (Mn) are realized in GaN nanowires through a simple and straight forward chemical vapor deposition (CVD) process. When the successful Mn doping was carefully examined in structural characterizations, it is discovered at the atomic level that the species of Mn dopants in GaN nanowires only exist in the feature of Mn+...

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Electron density modulation of GaN nanowires by manganese incorporation for highly high-rate Lithium-ion storage

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