Origin and mitigation of the imprint effect in hafnia-based ferroelectrics

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成果类型：

期刊论文

作者：

Wu, Fuling;Sun, Wenqi;Xiao, Shibing;Liu, Xiang;He, Jia;...

通讯作者：

Sun, HJ;Liu, XF

作者机构：

[Liu, Xiang; He, Jia; Sun, Wenqi; Wu, Fuling; Sun, Huajun] Wuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China.

[Wu, Fuling; Sun, Huajun] Wuhan Univ Technol, State Key Lab Silicate Mat Architectures, Wuhan 430070, Peoples R China.

[Sun, Wenqi; Sun, Huajun] Adv Ceram Inst Zibo New & High Tech Ind Dev Zone, Zibo 255000, Peoples R China.

[Liu, Xiaofang] Wuhan Univ Technol, Sch Chem Chem Engn & Life Sci, Wuhan 430070, Peoples R China.

[Xiao, Shibing] Hengyang Normal Univ, Coll Chem & Mat Sci, Hengyang 421008, Peoples R China.

通讯机构：

[Sun, HJ ; Liu, XF ] W

Wuhan Univ Technol, Sch Mat Sci & Engn, Wuhan 430070, Peoples R China.

Wuhan Univ Technol, State Key Lab Silicate Mat Architectures, Wuhan 430070, Peoples R China.

Adv Ceram Inst Zibo New & High Tech Ind Dev Zone, Zibo 255000, Peoples R China.

Wuhan Univ Technol, Sch Chem Chem Engn & Life Sci, Wuhan 430070, Peoples R China.

语种：

英文

期刊：

Nanoscale

ISSN：

2040-3364

年：

2025

卷：

期：

页码：

21792-21802

DOI：

10.1039/d5nr01594d

基金类别：

National Natural Science Foundation of China [U1806221]; National Natural Science Foundation of China [2018ZCQZB01, 2019ZCQZB03]; Instruction & Development Project for National Funding Innovation Demonstration Zone of Shandong Province

机构署名：

本校为其他机构

院系归属：

化学与材料科学学院

摘要：

The potential of hafnia-based ferroelectric materials for Ferroelectric Random Access Memory (FeRAM) applications is limited by the imprint effect, which compromises readout reliability. Here, we systematically investigate the asymmetric imprint behavior in W/Hf(0.5)Zr(0.5)O(2)/W ferroelectric capacitors, demonstrating that the imprint direction correlates directly with the ferroelectric polarization state. Notably, a pre-pulse of specific polarity can temporarily suppress the imprint effect. Combined experimental and theoretical analyses reveal that the directional segregation of oxygen vacan...

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Origin and mitigation of the imprint effect in hafnia-based ferroelectrics

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