The two-dimensional semiconductor As 2 C 3 , known for its ultrahigh carrier mobility of up to 4.45 × 10 5 cm 2 V –1 s –1 , holds significant potential for next-generation nanoelectronic devices. Selecting the appropriate electrodes is crucial for minimizing contact resistance and enhancing device performance. Using first-principles calculations, we systematically analyze the interface characteristics of As 2 C 3 in conjunction with a range of metallic and semimetallic electrodes. Our findings indicate that both As 2 C 3 /Au and As 2 C 3 /Bi...
