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Tuning the metal–semiconductor contact nature in MXene-based van der Waals heterostructures

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成果类型:
期刊论文
作者:
Wu, Yu-Han;Luo, Jia-Cheng;Zhang, Jing;He, Zi-Cheng;Lan, Yu;...
通讯作者:
Lan, Y;Huang, WQ
作者机构:
[Zhang, Jing; Luo, Jia-Cheng; He, Zi-Cheng] Hengyang Normal Univ, Nanyue Coll, Dept Phys & Elect Informat Sci, Hengyang 421008, Peoples R China.
[Lan, Yu] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.
[Huang, Wei-Qing; Huang, Gui-Fang] Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Peoples R China.
[Hu, Wangyu] Hunan Univ, Sch Mat Sci & Engn, Changsha 410082, Peoples R China.
通讯机构:
[Lan, Y ; Huang, WQ ] H
Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.
Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Peoples R China.
语种:
英文
关键词:
Schottky barrier;Metal-semiconductor contact;van der Waals heterostructure;Electric field;First -principles calculations
期刊:
Results in Physics
ISSN:
2211-3797
年:
2023
卷:
54
页码:
107047
基金类别:
National College Students Innovation and Entrepreneurship Training Program#&#&#202112659006
机构署名:
本校为第一且通讯机构
院系归属:
南岳学院
物理与电子工程学院
摘要:
Two-dimensional (2D) transition metal carbides, nitrides, or carbonitrides (MXenes) have emerged as promising ultrathin materials for nanoelectronics and optoelectronics. However, the contact barrier at metal–semiconductor (MS) junctions still significantly limits the device's performance. Here, we propose a novel strategy—functionalizing accompanied with external electric fields—to tune the MS contact nature in MXene-based van der Waals (vdW) heterostructures, taking 2D Ti 2 C as an example, by means of first-principles calculations. Differ...

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