Graphene-Bi2Te3 heterostructure as broadband saturable absorber for ultra-short pulse generation in Er-doped and Yb-doped fiber lasers

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成果类型：

期刊论文

作者：

Wang, Zhiteng*;Mu, Haoran;Yuan, Jian;Zhao, Chujun;Bao, Qiaoliang;...

通讯作者：

Wang, Zhiteng

作者机构：

[Wang, Zhiteng] Hengyang Normal Univ, Dept Phys & Elect Informat, Hengyang 421008, Peoples R China.

[Zhang, Han; Wang, Zhiteng] Shenzhen Univ, Shenzhen Univ Natl Univ Singapore Collaborat Inno, Coll Optoelect Engn, Shenzhen 518060, Peoples R China.

[Zhang, Han; Wang, Zhiteng] Shenzhen Univ, Minist Educ & Guangdong Prov, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China.

[Yuan, Jian; Bao, Qiaoliang; Mu, Haoran] Soochow Univ, Inst Funct Nano & Soft Mat, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China.

[Yuan, Jian; Bao, Qiaoliang; Mu, Haoran] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215123, Peoples R China.

通讯机构：

[Wang, Zhiteng] H

[Wang, Zhiteng] S

Hengyang Normal Univ, Dept Phys & Elect Informat, Hengyang 421008, Peoples R China.

Shenzhen Univ, Shenzhen Univ Natl Univ Singapore Collaborat Inno, Coll Optoelect Engn, Shenzhen 518060, Peoples R China.

Shenzhen Univ, Minist Educ & Guangdong Prov, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Shenzhen 518060, Peoples R China.

语种：

英文

关键词：

Graphene-Bi2Te3 heterostructure;broadband saturable absorbers;ultra-short pulse;fiber lasers

期刊：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

ISSN：

1077-260X

年：

2017

卷：

期：

页码：

195-199

DOI：

10.1109/JSTQE.2016.2514784

基金类别：

10.13039/501100001809-National Natural Science Foundation of China (Grant Number: 61222505, 51222208, 51290273 and 61435010) 10.13039/501100012164-National High-tech Research and Development Program (Grant Number: 2013AA031903) youth 973 program (Grant Number: 2015CB932700) Natural Science Foundation of Guangdong Province of China (Grant Number: 2014A030310416) 10.13039/501100002858-China Postdoctoral Science Foundation (Grant Number: 2015M572353) Sciences Foundation of Hengyang Normal University (Grant Number: 14B37) Hunan Provincial Applied Basic Research Base of Optoelectronic Information Technology (Grant Number: GD14K13)

机构署名：

本校为第一且通讯机构

院系归属：

物理与电子工程学院

摘要：

A new type of broadband saturable absorber made of graphene-Bi2Te3 heterostructure was reported, which synergistically combines light-matter interaction in graphene with that in a small bandgap semiconductor material Bi2Te3 to achieve an improved broadband nonlinear optical response. The graphene-Bi2Te3 heterostructure films were grown by chemical vapor deposition with 15% Bi2Te3 coverage on graphene, in which most of the Bi2Te3 nanoplatelets are less than 30 nm thick. It is interesting to find that the heterostructure thin film shows broadband...

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Graphene-Bi2Te3 heterostructure as broadband saturable absorber for ultra-short pulse generation in Er-doped and Yb-doped fiber lasers

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