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Highly Efficient and Stable Self-Powered Ultraviolet and Deep-Blue Photodetector Based on Cs2AgBiBr6/SnO2 Heterojunction

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成果类型:
期刊论文
作者:
Wu, Cuncun;Du, Bowen;Luo, Wei;Liu, Yang;Li, Tieyi;...
通讯作者:
Wang, Shufeng;Xiao, Lixin;Chen, Yanxue
作者机构:
[Wu, Cuncun; Fang, Zheyu; Li, Tieyi; Guo, Xuan; Liu, Yang; Chen, Zhijian; Wang, Shufeng; Du, Bowen; Ting, Hungkit; Xiao, Lixin; Wang, Duo; Luo, Wei; Wang, SF] Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.
[Wu, Cuncun; Fang, Zheyu; Li, Tieyi; Guo, Xuan; Liu, Yang; Chen, Zhijian; Wang, Shufeng; Du, Bowen; Ting, Hungkit; Xiao, Lixin; Wang, Duo; Luo, Wei; Wang, SF] Peking Univ, Dept Phys, Beijing 100871, Peoples R China.
[Chen, Yanxue] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.
[Chen, Yanxue] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.
[Xiao, Lixin] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421008, Hunan, Peoples R China.
通讯机构:
[Wang, SF; Xiao, LX] P
[Chen, Yanxue] S
[Xiao, Lixin] H
Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China.
Peking Univ, Dept Phys, Beijing 100871, Peoples R China.
语种:
英文
关键词:
Cs2AgBiBr6/SnO2 heterojunction;double perovskite Cs2AgBiBr6;responsivity;ultraviolet photodetectors
期刊:
Advanced Optical Materials
ISSN:
2195-1071
年:
2018
卷:
6
期:
22
页码:
1800811-
基金类别:
National Key R&D Program of China [2016YFB0401003]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [61575005, 61775004, 11574009, U1605244]; Hunan Provincial Applied Basic Research Base of Optoelectronic Information Technology [GD18K01]
机构署名:
本校为通讯机构
院系归属:
物理与电子工程学院
摘要:
Ultraviolet (UV) photodetectors with high responsivity and fast response are crucial for practical applications. Double perovskite Cs2AgBiBr6 has emerged as a promising optoelectronic material due to its excellent physics and photoelectric properties. However, no work is reported based on its film for photodetector applications. Herein, an ITO/SnO2/Cs2AgBiBr6/Au hole-transport layer free planar heterojunction device is fabricated for photodetector application. The device is self-powered with two responsivity peaks at 350 and 435 nm, which is su...

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