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Self-Competitive Growth of CsPbBr(3) Planar Nanowire Array.

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成果类型:
期刊论文
作者:
Fan, Chao;Zhu, Meiyi;Xu, Xing;Wang, Peng;Zhang, Qinglin;...
作者机构:
[Wang, Peng; Fan, Chao; Zhu, Meiyi; He, Haiping; Dai, Xingliang; Ye, Zhizhen] School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
[Wang, Peng; Fan, Chao; Zhu, Meiyi; He, Haiping; Dai, Xingliang; Ye, Zhizhen] Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang Provincial Engineering Research Center of Oxide Semiconductors for Environmental and Optoelectronic Applications, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, People's Republic of China
[Fan, Chao; Zhu, Meiyi; He, Haiping; Dai, Xingliang; Ye, Zhizhen] Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi 030000 People's Republic of China
[Xu, Xing] College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421010, People's Republic of China
[Zhang, Qinglin] School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
语种:
英文
关键词:
amplified spontaneous emission;eptiaxy;nanowire array;perovskites
期刊:
NANO LETTERS
ISSN:
1530-6984
年:
2024
机构署名:
本校为其他机构
院系归属:
物理与电子工程学院
摘要:
Semiconductor planar nanowire arrays (PNAs) are essential for achieving large-scale device integration. Direct heteroepitaxy of PNAs on a flat substrate is constrained by the mismatch in crystalline symmetry and lattice parameters between the substrate and epitaxial nanowires. This study presents a novel approach termed "self-competitive growth" for heteroepitaxy of CsPbBr(3) PNAs on mica. The key to inducing the self-competitive growth of CsPbBr(3) PNAs on mica involves restricting the nucleation of CsPbBr(3) nanowires in a high-adsorption region, which is accomplished by overlaying graphite ...

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