期刊论文

Wang, Yicheng;Yang, Tiefeng

英文

Materials Letters

0167-577X

2019

238

Mar.1

309-312

10.1016/j.matlet.2018.12.035

In summary, ultra-thin ZnTe semiconductor nanosheets have been successfully synthesized through the space-confined physical vapour deposition method. The nanosheets are high quality crystallized, with the thickness can be as thin as 65 nm. Typical p-type conductivity of the ZnTe nanosheets has been demonstrated, and the constructed PDs based on the ZnTe nanosheets exhibit a high photoresponsivity and good stability. These as-synthesized ZnTe nanosheets with novel electrical properties represent

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Low-dimensional semiconductor nanomaterials with novel properties hold great promise for potential electronics and photonics applications. Here we report the growth of high quality ultra-thin ZnTe nanosheets by a space-confined physical vapour deposition route. The as-prepared ZnTe nanosheets are well crystallized and exhibit the zinc-blende crystal structure, with lateral dimension up to tens of micrometers and thickness thin to tens of nanometers. P-type conductivity was confirmed by field-effect transistors based on the individual nanosheet. Photodetectors constructed by the high-quality Zn...