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Novel three-dimensional TiO2 structure with a unique quasi-direct band gap for photocatalysts

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成果类型:
期刊论文
作者:
Guo, Jiayi;Xu, Wangping;Cao, Juexian;Wei, Xiaolin
通讯作者:
Juexian Cao<&wdkj&>Xiaolin Wei
作者机构:
[Cao, Juexian; Guo, Jiayi; Xu, Wangping; Wei, Xiaolin] Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Peoples R China.
[Cao, Juexian; Guo, Jiayi; Xu, Wangping; Wei, Xiaolin] Xiangtan Univ, Dept Phys, Xiangtan 411105, Peoples R China.
[Wei, Xiaolin] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.
通讯机构:
[Juexian Cao; Xiaolin Wei] D
Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, P. R. China<&wdkj&>Department of Physics & Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, P. R. China<&wdkj&>College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang 421002, P. R. China
语种:
英文
期刊:
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN:
1463-9076
年:
2023
卷:
25
期:
19
页码:
13623-13629
基金类别:
National Natural Science Foundation of China [12204398]; Science and Technology Innovation Program of Hunan Province [2022RC3027]; Science and Technology Plan Project of Hengyang City [202150083393]; National Key Research and Development Program of China [2020YFA0714703]; Xiangtan Science and Technology Bureau [ZD-ZD20211002]; Hunan Provincial Innovation Foundation for Postgraduate [CX20210619]
机构署名:
本校为其他机构
院系归属:
物理与电子工程学院
摘要:
Motivated by fundamental interests and practical applications, three-dimensional (3D) photocatalysts are a fascinating area of research in clean energy. Based on first-principles calculations, we predicted three new 3D polymorphs of TiO2: delta-, epsilon-, and zeta-TiO2. Our results indicate that the band gaps of TiO2 decrease almost linearly with an increase in the coordination number of Ti. Moreover, delta-TiO2 and zeta-TiO2 are semiconductors, whereas epsilon-TiO2 is a metal, and the lowest energy of zeta-TiO2 is a quasi-direct band gap semiconductor with a distinctive band gap of 2.69 eV, ...

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