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The effect of illumination and electrode adjustment on the carrier behavior in special multilayer devices

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成果类型:
期刊论文
作者:
Deng, Yanhong*;Ou, Qingdong;Wang, Jinjiang;Zhang, Dengyu;Chen, Liezun;...
通讯作者:
Deng, Yanhong
作者机构:
[Deng, Yanhong; Chen, Liezun; Zhang, Dengyu; Wang, Jinjiang] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.
[Deng, Yanhong; Li, Yanqing; Ou, Qingdong] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China.
[Ou, Qingdong] Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia.
通讯机构:
[Deng, Yanhong] H
[Deng, Yanhong] S
Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.
Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Peoples R China.
语种:
英文
关键词:
carrier behavior;electrode adjustment;illumination;intermediate connectors;photoelectric effect
期刊:
Journal of Physics D: Applied Physics
ISSN:
0022-3727
年:
2017
卷:
50
期:
31
页码:
315101
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11647130]; Hunan Provincial Education DepartmentHunan Provincial Education Department [15B033]; Science Foundation of Hengyang Normal University [14B40]; Hunan Provincial Applied Basic Research Base of Optoelectronic Information Technology [GD14K04]; Science and Technology Plan Project of Hunan Province [2016TP1020]; Construct Program of the Key Discipline in Hunan Province
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子工程学院
摘要:
Intermediate connectors play an important role in semiconductor devices, especially in tandem devices. In this paper, four types of different intermediate connectors (e.g. Mg:Alq3/MoO3, MoO3, Mg:Alq3, and none) and two kinds of modified electrode materials (LiF and MoO3) integrated into the special multilayer devices are proposed, with the aim of studying the impact of light illumination and electrode adjustment on the carrier behavior of intermediate connectors through the current density-voltage characteristics, interfacial electronic structures, and capacitance-voltage characteristics. The ...

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