版权说明 操作指南
首页 > 成果 > 详情

Strain engineering on the band alignment transition and photocatalytic property in MoS2/MSe (M = In, Ga) heterojunctions

认领
导出
Link by DOI
反馈
分享
QQ微信 微博
成果类型:
期刊论文
作者:
Caizhi Wu;Yipeng Zhao*;Liang Ma;Yicheng Wang;Zhiqiang Li
通讯作者:
Yipeng Zhao
作者机构:
[Caizhi Wu; Yipeng Zhao; Liang Ma; Yicheng Wang; Zhiqiang Li] College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China
通讯机构:
[Yipeng Zhao] C
College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang, 421008, China
语种:
英文
期刊:
Journal of Physics and Chemistry of Solids
ISSN:
0022-3697
年:
2026
卷:
208
页码:
113216
基金类别:
CRediT authorship contribution statement Caizhi Wu: Writing – original draft, Investigation, Formal analysis, Data curation. Yipeng Zhao: Writing – review & editing, acquisition, Conceptualization. Liang Ma: Validation, Methodology, acquisition. Yicheng Wang: Visualization, Validation, Methodology, Formal analysis. Zhiqiang Li: Writing – review & editing, Methodology, Conceptualization.
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子工程学院
摘要:
Two-dimensional van der Waals heterojunctions are seen as a powerful strategy to tune the electronic properties and enhance their performance in devices. In this study, we have systematically investigated the electronic properties and energy band alignments of MoS 2 /MSe (M = In, Ga) heterojunctions using first-principles calculations. The MoS 2 /InSe heterojunction exhibits a type-I band alignment, whereas the MoS 2 /GaSe heterojunction presents a type-II band characteristic. Furthermore, the MoS 2 /InSe heterojunction achieves a transition fr...

反馈

验证码:
看不清楚,换一个
确定
取消

成果认领

标题:
用户 作者 通讯作者
请选择
请选择
确定
取消

提示

该栏目需要登录且有访问权限才可以访问

如果您有访问权限,请直接 登录访问

如果您没有访问权限,请联系管理员申请开通

管理员联系邮箱:yun@hnwdkj.com