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Interface and strain engineering on the electronic properties of two-dimensional Janus In 2 Se 2 S/WGeSiX 4 (X = N, P, As) van der Waals heterostructures

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成果类型:
期刊论文
作者:
Wang, Jianfei;Li, Zhiqiang;Ma, Liang;Zhao, Yipeng
通讯作者:
Zhao, YP
作者机构:
[Ma, Liang; Wang, Jianfei; Zhao, YP; Li, Zhiqiang; Zhao, Yipeng] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421008, Peoples R China.
通讯机构:
[Zhao, YP ] H
Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421008, Peoples R China.
语种:
英文
关键词:
two-dimensional Janus heterostructure;density functional theory;stacking configurations;WSiGeX4;In2Se2S
期刊:
Journal of Physics D: Applied Physics
ISSN:
0022-3727
年:
2025
卷:
58
期:
20
页码:
205301
基金类别:
Research Fund of Hunan Provincial Education Department [52302174]; National Natural Science Foundation of China [22B0715]; Scientific Research Fund of Hunan Provincial Education Department
机构署名:
本校为第一且通讯机构
院系归属:
物理与电子工程学院
摘要:
Janus two-dimensional materials have attracted extensive research attention owing to their intrinsic electric dipole moments and excellent properties. Here, a systematic study on the electronic properties of In 2 Se 2 S/WSiGeX 4 (X = N, P, As) van der Waals heterostructures (vdWHs) is presented. The results showed that the different interfacial stacking configurations can modulate the net dipole moment strength and band alignment of In 2 Se 2 S/WSiGeX 4 vdWHs. The In 2 Se 2 S/WSiGeP 4 vdWHs exhibit type-I band alignment with direct bandgap characteristics when adopting Si(Ge)/Se interfacial co...

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