Janus two-dimensional materials have attracted extensive research attention owing to their intrinsic electric dipole moments and excellent properties. Here, a systematic study on the electronic properties of In 2 Se 2 S/WSiGeX 4 (X = N, P, As) van der Waals heterostructures (vdWHs) is presented. The results showed that the different interfacial stacking configurations can modulate the net dipole moment strength and band alignment of In 2 Se 2 S/WSiGeX 4 vdWHs. The In 2 Se 2 S/WSiGeP 4 vdWHs exhibit type-I band alignment with direct bandgap characteristics when adopting Si(Ge)/Se interfacial co...