期刊论文

中文

发光学报

1000-7032

2007

28

4

551-556

本校为第一机构

利用直流电源对发光二极管(LED)的结电容充电,切断直流电源后对LED的电压-时间特性进行测量.当充电电压低于LED复合发光的门槛电压,LED的电压-时间特性与普通二极管的相似.当充电电压高于LED复合发光的门槛电压,首次观察到:开始放电的瞬间会出现一个快速下降过程,快速下降到门槛电压以下;LED上的电压越高,快速下降到的电压越低.对该现象进行分析,得到一些新的结论.当LED的正偏电压高于复合发光的门槛电压后,出现了注入到扩散区的非平衡载流子随正偏电压的提高而减小的现象,即(dQ)/(dU)＜0.

The forward current-voltage characteristic and forward capacitance-voltage characteristic measurements are the most important methods to study the forward electrical characteristic of light-emitting diodes. These methods can be used to characterize the properties of light-emitting diodes. To further understand p-n junction characteristics of light-emitting diodes, a novel method for measuring p-n junction was proposed. A direct current electrical source was used to charge the junction capacitance of light-emitting diodes, and the voltage-time characteristics of light-emitting diode was measure...