The forward current-voltage characteristic and forward capacitance-voltage characteristic measurings are the most important methods to study the forward electrical characteristic of GaN light-emitting diodes. We can use the forward alternating current （ae） small signal method to measure the capacitance-voltage characteristic of the GaN light-emitting diodes. Some values of GaN light-emitting diodes parameters can be deduced from capacitance-voltage characteristic. The negative capacitance phenomenon of GaN light-emitting diode can be observed...
