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Electronic structure tuning and band gap opening of graphene by hole/electron codoping

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成果类型:
期刊论文
作者:
Deng, Xiaohui;Wu, Yanqun;Dai, Jiayu*;Kang, Dongdong;Zhang, Dengyu
通讯作者:
Dai, Jiayu
作者机构:
[Deng, Xiaohui; Zhang, Dengyu] Hengyang Normal Univ, Dept Phys & Elect Informat Sci, Hengyang 421008, Peoples R China.
[Wu, Yanqun] Natl Univ Def Technol, Coll Optoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China.
[Dai, Jiayu] Natl Univ Def Technol, Dept Phys, Coll Sci, Changsha 410073, Hunan, Peoples R China.
通讯机构:
[Dai, Jiayu] N
Natl Univ Def Technol, Dept Phys, Coll Sci, Changsha 410073, Hunan, Peoples R China.
语种:
英文
关键词:
Density-functional theory;Doping;Electronic band structure;Graphene
期刊:
Physics Letters A
ISSN:
0375-9601
年:
2011
卷:
375
期:
44
页码:
3890-3894
基金类别:
National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [11104351]; Hunan Provincial Education DepartmentHunan Provincial Education Department [11C0181]
机构署名:
本校为第一机构
院系归属:
物理与电子工程学院
摘要:
A pathway to open the band gap of graphene by p-n codoping is presented according to the first principles study. Two models are used: Lithium adsorbed on Boron-doped graphene (BC) and Boron-Nitrogen (B/N) codoping into graphene. The stability of Lithium adsorbed on BC is firstly analyzed, showing that the hollow site is the most stable configuration, and there is no energy barrier from some metastable configurations to a stable one. After the p-n codoping, the electronic structures of graphene are modulated to open a band gap with width from 0.0 eV to 0.49 eV, depending on the codoping configu...

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