摘要：
A method and device for measuring radon by electrostatic collection without influence of environmental temperature and humidity. The device comprises a measuring cavity (1), a semiconductor detector (2), a high-voltage module (3), a sampling pump (4), a vacuum meter (5) and a regulating valve (6), wherein the regulating valve (6) is arranged on the air inlet channel of the cavity; the vacuum meter (5) and the sampling pump (4) are arranged on the air outlet channel of the measuring cavity in sequence; the semiconductor detector (2) is arranged on the upper part inside the measuring cavity and connected with one interface end of the high-voltage module through a wire, and the other interface end of the high-voltage module is connected with the shell of the measuring cavity through a wire. The method, achieved by reducing air pressure in the electrostatic collection measuring cavity below a certain threshold value, can make the efficiency of collecting positively charged 218Po particles on the surface of the detector by the electrostatic collection measuring cavity basically unchanged when the relative air humidity of external environment is changed from 0％ to 100％ in the working temperature range of 0 to 45 degrees, thereby the detecting efficiency is not changed with the change of temperature and humidity of the external environment, and the threshold value is related to a geometric factor of the measuring cavity and the electric field intensity distribution in the measuring cavity.
摘要：
A method and device for measuring radon by an electrostatic collection method without an influence of an environmental temperature and humidity is by reducing a pressure that in an electrostatic collection and measuring chamber to below a certain threshold value, in an operation temperature range of 0-45 degrees, and an air relative humidity of an external environment changing in 0％-100％, a collection efficiency of the collection and measuring chamber of the static electricity that collects positively charged 218Po particle to a surface of a semiconductor detector is basically unchanged, so when a temperature and a humidity of the external environment change, a detection efficiency does not change; the threshold value relates to a geometric factor and a distribution of an electric field intensity that in different measuring chamber. The device comprises a measuring chamber, a semiconductor detector, a high-voltage module, a sampling pump, a vacuum gauge, and a regulating valve. The regulating valve is installed on an inlet pipe of the measuring chamber. The vacuum gauge and the sampling pump are installed on an outlet pipe of the measuring chamber. The semiconductor detector is installed inside an upper portion of the measuring chamber, and is connected to an interface port of the high-voltage module by a wire. Another interface port of the high-voltage module is connected to a shell of the measuring chamber by a wire.
