摘要：
著名学者 Benedict Richard Anderson 曾说:"民族是一种想象的共同体."1民族共同体的建立依托于与本民族有关的诸多因素,它们在历史发展的过程中建立起盘根错节的联系,同时以一种特殊的想象力链接在一起,构成不可分割的整体.湘西地区民族构成多样化,苗族、土家族、侗族、瑶族等都是在本地生活时间较长,历史悠久,民族文化深厚的原住少数民族,也逐渐形成了它们特有的意识基础与特色文化,本土民族民间音乐也很丰富.
期刊：
Results in Physics,2023年54:107047 ISSN：2211-3797
通讯作者：
Lan, Y;Huang, WQ
作者机构：
[Zhang, Jing; Luo, Jia-Cheng; He, Zi-Cheng] Hengyang Normal Univ, Nanyue Coll, Dept Phys & Elect Informat Sci, Hengyang 421008, Peoples R China.;[Lan, Yu] Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.;[Huang, Wei-Qing; Huang, Gui-Fang] Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Peoples R China.;[Hu, Wangyu] Hunan Univ, Sch Mat Sci & Engn, Changsha 410082, Peoples R China.
通讯机构：
[Lan, Y ; Huang, WQ ] H;Hengyang Normal Univ, Coll Phys & Elect Engn, Hengyang 421002, Peoples R China.;Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Changsha 410082, Peoples R China.
关键词：
Schottky barrier;Metal-semiconductor contact;van der Waals heterostructure;Electric field;First -principles calculations
摘要：
Two-dimensional (2D) transition metal carbides, nitrides, or carbonitrides (MXenes) have emerged as promising ultrathin materials for nanoelectronics and optoelectronics. However, the contact barrier at metal --semiconductor (MS) junctions still significantly limits the device's performance. Here, we propose a novel strategy-functionalizing accompanied with external electric fields-to tune the MS contact nature in MXene-based van der Waals (vdW) heterostructures, taking 2D Ti2C as an example, by means of first-principles calcu-lations. Different Ti2CO2/Ti2CX2 (X = OH or S) vdW heterostructures are designed via functionalizing Ti2C metals to contact with 2D Ti2CO2. We reveal that OH functionalized vdW MS heterostructure (Ti2CO2/Ti2C (OH)2) can be tuned to the Ohmic contact owing to the strong interlayer interaction inducing a large number of interlayer transferred electrons; while for the sulfurized vdW MS heterostructure (Ti2CO2/Ti2CS2), its Schottky barrier height and contact type can be effectively tuned by external electric field due to the rather weak inter -layer interaction. Our work paves a new way for the construction of 2D MXene-based vdW MS heterostructures and demonstrates the great potential of 2D MXenes in future nanoelectronics and optoelectronics.
摘要：
Estimation of crop lodging has been extensively investigated. However, mechanisms concerning the variation of crop lodging resistance at different stages of lifecycle during maturation are still unclear. Here, we develop a simplified Euler buckling model to estimate the effect of gradient structural parameters on the lodging resistance and material utilization of rice stem. Three-point bending test was carried out to obtain the stiffness gradient of rice stem. Experimental results show that green rice stem has relatively high material utilization and lodging resistance. When rice stem becomes dry during maturation, the bending rigidity and material utilization of rice stem dramatically decrease, and the weight of panicle increases due to the redistributions of moisture and nutrient substance, which simultaneously increases the lodging risk of rice. The bending rigidity decreases by 71.9%; meanwhile, the material utilization of rice stem decreases around 8.7% when rice stem changes from green to dry. Although the stiffness distribution is not the main factor influencing rice lodging, the effect of stiffness distribution of rice stem on its lodging resistance still cannot be neglected during rice maturation.
作者机构：
[Xiao, Zhenxiu] Hengyang Normal Univ, Nanyue Coll, Hengyang 421008, Hunan, Peoples R China.;[Jiang, Wujiu; Fu, Weiwei] Hengyang Normal Univ, Key Lab Met Organ New Mat, Sch Chem & Mat Sci, Key Lab Funct Met Organ Cpds Hunan Prov,Coll Hunan, Hengyang 421008, Hunan, Peoples R China.;[Deng, Xin] Hengyang Normal Univ, Sch Chem & Mat Sci, Hengyang 421008, Peoples R China.
摘要：
C22H28N2O2, monoclinic, P2(1)/n (no. 14), a = 6.463(3) angstrom, b = 14.889(6) angstrom, c = 10.282(4) angstrom, beta = 95.105(5)degrees , V = 985.5(7) angstrom(3), Z = 2, R-gt(F) = 0.0425, wR(ref)(F-2) = 0.1206, T = 296 (2) K. CCDC no.: 2234957 Table 1 contains crystallographic data and Table 2 contains the list of the atoms including atomic coordinates and displacement parameters.
摘要：
Adsorption of atoms on the surface of two-dimensional (2D) materials is one of the most effective ways to induce magnetic properties. In this study, the atomic structure, electronic structure, magnetic properties, and strain effects of VA group atoms (N, P, As, Sb and Bi) adsorbed on a WS2 monolayer are systematically studied using a first-principles method. After calculating the adsorption energy, it was determined that all of the VA group atoms showed a preference for being directly adsorbed above the S atoms. Based on the analysis of the orbital projection density of states and charge transfer, it appears that the group VA atoms chemisorb onto the WS2 layer. The adsorption of the VA group atoms on a WS2 monolayer will introduce 1 & mu;(B) magnetic moment into the system. It is exciting that WS2 monolayer adsorbed with P, As, Sb or Bi is half-metallic with 100% spin polarization at the Fermi level. Furthermore, the magnetic properties are robust in the range of 10% strain and the magnetic moment of the system can be effectively controlled by tensile strain. In addition, when two or four atoms are adsorbed on a monolayer WS2 supercell, the adatoms show a tendency towards alignment in terms of their local magnetic moments, which may indicate a potential for ferromagnetic ordering in the system. After the adsorption of VA group atoms, monolayer WS2 exhibits structural stability, tunable magnetism under strain, 100% spin polarizability, and potential for ferromagnetism, making it a promising material for spintronic device applications.
